Wide band gap semiconductor devices, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are revolutionizing the industry with superior performance characteristics. These advanced materials are increasingly being utilized in high power and high voltage applications due to their ability to operate at higher frequencies, temperatures, and voltages than traditional silicon-based devices. GaN and SiC devices offer enhanced efficiency, reduced energy losses, and increased power density, making them ideal for applications in power electronics, renewable energy systems, electric vehicles, and aerospace industries. Their reliability and robustness make them indispensable for achieving higher performance standards in demanding industrial environments.

Research publications

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Research projects

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Contact

Assoc. Prof. Samaneh Sharbati sharbati@sdu.dk, +4565508260

Research scope

Our research scope encompasses the design and simulation of semiconductor devices, where we strive to apply innovative solutions to address technological challenges. By delving into the functionality, physical, and electrical mechanisms within the devices, we aim to optimize their performance for specific applications, tailoring characteristics such as voltage, current, and frequency to meet desired specifications. In addition, we thoroughly investigate failure mechanisms to enhance device reliability. Furthermore, our focus extends beyond individual devices as we also design power electronic circuits with specific characteristics, ensuring comprehensive solutions for diverse industrial needs.

In addition to our focus on wide band gap semiconductor devices, our research also delves into chip technology. By exploring advancements in chip technology, we aim to enhance the integration, miniaturization, and performance of semiconductor devices. This dual focus on wide band gap devices and chip technology allows us to drive innovation and push the boundaries of technological capabilities in the semiconductor industry.

Research goal

• Investigate the potential of wide band gap semiconductor devices, specifically GaN and SiC, for high power and high voltage applications in various industries.
• Explore the integration of chip technology with wide band gap devices to enhance performance, efficiency, and reliability.
• Develop innovative solutions to address the challenges in power electronics, renewable energy systems, electric vehicles, and aerospace industries through the utilization of GaN and SiC devices.
• Collaborate with industry partners to translate research findings into practical applications and contribute to the advancement of semiconductor technology.
• Continuously strive to push the boundaries of technological capabilities and drive innovation in the field of semiconductor devices and chip technology

The impact of our research 

• Reduced Power Loss: Our research in chip technology aims to minimize power losses in semiconductor devices, leading to increased energy efficiency and reduced heat generation during operation.
•  High Switching Frequency: By focusing on chip technology, we strive to achieve high switching frequencies in semiconductor devices, enabling faster and more precise control of power flow and enhancing overall system performance.
• Enhanced Integration: Our research efforts in chip technology seek to improve integration capabilities, allowing for the development of compact and efficient semiconductor devices with optimized functionality.
• Improved Reliability: through advancements in chip technology, we aim to enhance the reliability and robustness of semiconductor devices, ensuring consistent performance under varying operating conditions.
• Cutting-Edge Design: Our exploration of chip technology involves innovative design approaches to create next-generation semiconductor devices that meet the evolving demands of high power and high voltage applications.

Research topics

• Simulation and Design of Wide band gap semiconductor devices (GaN and SiC): Lateral and Vertical Devices.
• Addressing the challenges of current technologies.
• Driving innovation and technological advancements in the semiconductor industry
• Manage trade-off between Breakdown voltage, On-resistance, Frequency operation, and size of the device for the highest FOM.

Industrial activities

• Technical advisory of GaN device developer.

Research group

• Samaneh Sharbati (Associate Professor, Group Leader)
• Nilesh Kumar Jaiswal (Postdoc)
• Ashrafun Naher Pinky (PhD Student)